发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING TWISTED BIT-LINES FOR MAINTAINING UNIFORMITY OF CELL PATTERNS
摘要 PURPOSE: A semiconductor memory device having twisted bit-lines is provided to form reliable cells by maintaining uniformity of cell patterns. CONSTITUTION: A plurality of transistors are formed in uniform and continuous patterns on a cell array region of a semiconductor memory device. A plurality of storage elements are electrically connected to the transistors in uniform and continuous patterns. Word line couples and bit line couples are perpendicular to each other. The bit line couples crosses each other in an insulating state on a predetermined region in which the transistors and the bit line couples are not electrically connected to each other.
申请公布号 KR20050008129(A) 申请公布日期 2005.01.21
申请号 KR20030047975 申请日期 2003.07.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, YOUNG JU;KIM, GYU HONG;LEE, CHEOL HA
分类号 H01L27/04;(IPC1-7):H01L27/04 主分类号 H01L27/04
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