| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of extracting the parameters of a field effect transistor which can accurately extract an effective channel length and the threshold voltage of the field effect transistor. SOLUTION: The method of extracting the parameters of the field effect transistor includes a step S1 of setting a mutual conductance gm of each of a plurality of field effect transistors as the 1st function of a gate voltage Vg, a step S2 of setting the inverse number 1/γof the change rate (tilt)γof a region where the mutual conductance gm linearly changes as the 2nd function of a gate length Lg, a step S3 of forming the 3rd function of the gate length Lg passing through an origin with the same change rate (tilt) as the change rate (tilt) to the gate length Lg of 1/γ, a step S4 of setting an amount of change shifted in the direction of a gate major axis as an overlapping lengthΔL as comparing the 3rd function with the 2nd function, and a step S5 of setting a differential value between the gate length Lg and the overlapping lengthΔL as the effective channel length of the field effect transistor. COPYRIGHT: (C)2005,JPO&NCIPI
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