发明名称 SEMICONDUCTOR INTEGRATED DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated device in which the output voltage and power-supply voltage of a reference voltage generating circuit can be stabilized by suppressing high-frequency noise. <P>SOLUTION: This semiconductor integrated device 1 is provided with the reference voltage generating circuit 41, a bonding pad 31 connected to the output of the circuit 41, and a lead 11 connected to the pad 31 through a bonding wire 21. This device 1 is also provided with another bonding pad 33 connected to the lead 11 through another bonding wire 23, and a circuit 43 which is connected to the bonding pad 33 and generates the high-frequency noise. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005019482(A) 申请公布日期 2005.01.20
申请号 JP20030178845 申请日期 2003.06.24
申请人 ROHM CO LTD 发明人 UMEKI NOBUAKI;KITANI YASUSHI
分类号 H01L27/04;G05F1/46;G11C5/14;H01L21/822 主分类号 H01L27/04
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