SEMICONDUCTOR DEVICE WITH FUSE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with a new fuse in which moisture resistance can be enhanced at the blow-out part of an Al fuse, and to provide its manufacturing method. SOLUTION: After a fuse 10 is formed on a semiconductor substrate 22, it is covered with an underlying oxide film 16 which is then covered with a protective nitride film 12. The protective nitride film 12 is then etched at the blow-out part 10a of the fuse 10 to have a thickness of 2,000-6,000Åthus forming an opening 14 for laser welding. Moisture resistance can thereby be enhanced at the blow-out part and manufacturing can be facilitated as compared with a case where a moisture resistant nitride film 20 is deposited separately. COPYRIGHT: (C)2005,JPO&NCIPI