| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element that can stably operate at a high temperature under a low operating current, low operating voltage, and low aspect ratio condition. SOLUTION: The semiconductor laser element has at least a first-conductivity clad layer, first light guide layer, active layer, second light guide layer, second-conductivity clad layer, and mesa section successively formed on a semiconductor substrate in this order. In the first-conductivity clad layer, a first-conductivity low-refractive-index layer 26 which is lower in refractive index than the first-conductivity clad layer is provided at a position which is separated from the active layer by 0.1-0.5μm. In this case, it is preferable to adjust the thickness of the layer 26 to 0.1-0.4μm. COPYRIGHT: (C)2005,JPO&NCIPI
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