| 摘要 |
PROBLEM TO BE SOLVED: To promote an epitaxial growth in a lower temperature, to reduce a weak bond in an amorphous film which causes deterioration by light, and to reduce density in an uncoupled bond in the film, which shows a level of trapping a carrier. SOLUTION: An apparatus comprises mutually connected two ultra-high vacuum tanks, a substrate holder 11, a vapor deposition unit 5 for vaporizing a thin-film material as an atomic beam, a gas dissociation irradiation unit 6 for dissociating an introduced gas and irradiating a substrate with the atomic beam, a mesh electrode for accelerating and converging the atomic beam, a holder-position-adjusting apparatus 7 for holding the substrate holder 11 and applying electric voltage on the substrate, a substrate heater 9 for heating the substrate holder, and a transportation manipulator 4 for transporting the substrate holder between a film-forming unit and a load lock. The method for forming various kinds of semiconductor thin films includes irradiating the substrate simultaneously with a semiconductor molecule beam evaporated from the vapor deposition unit 5, and the atomic beam emitted from the gas dissociation irradiation unit 6. COPYRIGHT: (C)2005,JPO&NCIPI
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