| 发明名称 |
RESIST COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition excellent in transparency to radiation and dry etching resistance and capable of forming a resist pattern excellent in resolution, sensitivity, flatness and heat resistance, and to provide a method for manufacturing a semiconductor device with a fine pattern having a high degree of integration using the resist composition. <P>SOLUTION: The resist composition comprises a fluoropolymer (A) having a monomer unit with a fluorine-containing alicyclic structure obtained by cyclopolymerization of a fluorine-containing diene (I) represented by the formula (I): CF<SB>2</SB>=CFCF<SB>2</SB>-C(CF<SB>3</SB>)(OR)-CH<SB>2</SB>CH=CH<SB>2</SB>(where R is a 2-cyclohexylcyclohexyloxymethyl group structure), an acid generating compound (B) and an organic solvent (C). The method for manufacturing the semiconductor device uses the resist composition. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
| 申请公布号 |
JP2005017387(A) |
申请公布日期 |
2005.01.20 |
| 申请号 |
JP20030178468 |
申请日期 |
2003.06.23 |
| 申请人 |
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC;ASAHI GLASS CO LTD |
发明人 |
ITANI TOSHIRO;IRIE SHIGEO;HAGIWARA TAKUYA;KAWAGUCHI YASUHIDE;YOKOKOJI OSAMU |
| 分类号 |
G03F7/033;C08F36/20;G03F7/004;G03F7/039;G03F7/38;H01L21/027 |
主分类号 |
G03F7/033 |
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