| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of polishing wafer by which a wafer can be thinned without chipping or cracking the edge of the wafer even when the wafer is polished to an ultra-thin wafer having a finished thickness of≤100μm. SOLUTION: The outer peripheral section 15 of the wafer 2 is removed by cutting the wafer 2 perpendicularly to the surface 3 of the wafer 2 along the boundary between the internal region 16 of the wafer 2 in which a semiconductor element or a circuit is formed, and the outer peripheral section 15 on the outside of the internal region 16. Then the surface 3 of the wafer 2 is stuck to a supporting member 10 having a larger surface dimension than the wafer 2 has. Thereafter, the thickness of the wafer 2 is reduced to a prescribed finished thickness by polishing the rear surface 30 of the wafer 2 while the surface 3 of the wafer 2 is supported by the supporting member 10. COPYRIGHT: (C)2005,JPO&NCIPI |
