SEMICONDUCTOR DEVICE, TERAHERTZ WAVE GENERATING DEVICE, AND THEIR MANUFACTURING METHODS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that inexpensively realizes a simple small-sized terahertz-wave light source, and to provide a terahertz wave generating device and methods of manufacturing the devices. SOLUTION: In the semiconductor device, an AlSb buffer layer 31 is formed on an Si substrate 30 which makes little absorption in a terahertz region and an InAs layer 32 is epitaxially grown on the buffer layer 31 as a crystalline semiconductor layer used for generating a terahertz wave L2. The InAs layer 32 is constituted in a transmission type which uses the surface 3a of the layer 32 as the plane of incidence of pulsed pumping light L1 and the surface 3b of the Si substrate 30 as the emitting surface of the terahertz wave L2 generated in the InAs layer 32 by the pumping light L1. COPYRIGHT: (C)2005,JPO&NCIPI