发明名称 Ion irradiation of a target at very high and very low kinetic ion energies
摘要 A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/ deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.
申请公布号 US2005012052(A1) 申请公布日期 2005.01.20
申请号 US20040886463 申请日期 2004.07.07
申请人 IMS-IONEN MIKROFABRIKATIONS SYSTEME GMBH 发明人 PLATZGUMMER ELMAR;STENGL GERHARD;LOESCHNER HANS
分类号 G03F7/20;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):H01J37/317 主分类号 G03F7/20
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