发明名称 |
Ion irradiation of a target at very high and very low kinetic ion energies |
摘要 |
A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/ deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.
|
申请公布号 |
US2005012052(A1) |
申请公布日期 |
2005.01.20 |
申请号 |
US20040886463 |
申请日期 |
2004.07.07 |
申请人 |
IMS-IONEN MIKROFABRIKATIONS SYSTEME GMBH |
发明人 |
PLATZGUMMER ELMAR;STENGL GERHARD;LOESCHNER HANS |
分类号 |
G03F7/20;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):H01J37/317 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|