| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having trenches which can be shrunk further. <P>SOLUTION: This semiconductor device is provided with a first element region (10-1) having a first trench (11-11) disposed in a first row (C1) at one end, and a second trench (11-24) disposed in a second row (C2) arranged in parallel with the first row (C1) at the other end; and a second element region (10-2) having a third trench (11-13) disposed at a position nearer to the first trench (11-11) than the second trench (11-24) in the first row (C1) at one end, and a fourth trench (11-26) disposed in the second row (C2) at the other end. This device is also provided with a third element region (10-3) having a fifth trench (11-15) disposed at a position nearer to the third trench (11-13) than the fourth trench (11-26) in the first row (C1) at one end, and a sixth trench (11-28) disposed in the second row (C2) at the other end. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
