| 摘要 |
PROBLEM TO BE SOLVED: To form a stable silicide layer even though silicon has a damaged layer at the time of the formation of the silicide. SOLUTION: A contact hole 12a is first formed by performing dry etching on an interlayer insulator film 12, thereafter, a barrier layer 14 consisting of TiN and an adhesive layer 15 consisting of Ti are sequentially deposited over the entire surface including the bottom surface and peripheral surface of the contact hole 12a. Next, only the mutual diffusion of Ti atoms on the side of the barrier layer 14 and Si atoms in a substrate 11 is performed, at least one-hour diffusion thermal treatment is performed at the temperature of 400°C where silicification does not occur to sufficiently diffuse the Si atoms on the side of the barrier layer 14 and the Ti atoms in the substrate 11, respectively, thereby forming a diffusion layer 16A. Next, the silicide thermal treatment is performed at the temperature of 500°C to 800°C where any silicifying reaction is triggered for a short time of less than 60 seconds. COPYRIGHT: (C)2005,JPO&NCIPI
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