METHOD FOR FORMING INTERCONNECTION CONTACT EMBODYING OPEN LINE WIDTH EXTENDED FROM BOTTOM OF CONTACT HOLE BY DEPOSITION AND ELIMINATION OF SILICIDE LAYER TO PRECISELY GUARANTEE OPEN DEGREE OF BOTTOM OF CONTACT HOLE

摘要

PURPOSE: A method for forming an interconnection contact embodying an open line width extended from the bottom of a contact hole by deposition and elimination of a silicide layer is provided to precisely guarantee an open degree of the bottom of the contact hole by depositing a metal layer to form a metal silicide layer in contact with the bottom of the contact hole and by eliminating the metal silicide layer and the metal layer. CONSTITUTION: A silicon lower layer is covered with an insulation layer(300). The insulation layer is patterned to form a contact hole(301) exposing the silicon lower layer to the bottom. A metal layer(400) is formed in the contact hole to form a metal silicide layer(401), coming in contact with the silicon lower layer. The metal silicide layer and the metal layer are eliminated. An interconnection contact is formed to fill the contact hole.