| 摘要 |
<p>1288058 Encapsulated semi-conductor devices GENERAL ELECTRIC CO 2 Dec 1969 [9 Dec 1968] 58836/69 Heading H1K Protection is provided for the semi-conductor elements of transistors, thyristors, and rectifiers. The wafers have (bevelled) edges at which PN-junctions emerge and are then passivated with glass layers which have a specific thermal expansion differential with respect to the semiconductor of less than 5 Î 10<SP>-4</SP>, a dielectric strength of at least 975 volts/mil., and a resistivity of at least 10<SP>12</SP> ohm/cm. A layer of pliant material having a dielectric strength of at least 500 volts/mil. and a resistivity of at least 10<SP>12</SP> ohm/cm. surrounds the structure to protect against mechanical shock and fluid penetration. A semi-conductor wafer is preferably bonded to its immediate electrodes with a soft solder having a modulus of elasticity at ambient temperatures of less than 1.1 x 10<SP>7</SP> lbs./sq. inch. The assembly with electrodes and an attached heat sink is then provided with a moulded plastics encapsulation. Glasses cited are borozincates containing (a) Si, Zn, Al, B, and O and (b) Si, Zn B, Ce, Bi, Pb, Sb, and O. Pliant materials suggested are organopolysiloxanes such as silicone rubbers, preferably unfilled. The Specification discloses interesting thyristor and triac structures, the contact system of copending Applications 57692/69 and the header/ heat sink unit of 59854/69.</p> |
