| 摘要 |
PROBLEM TO BE SOLVED: To lower heat treatment temperature for conducting the predetermined heat treatment such as a film forming process to form a film to a substrate by supplying the treatment gas into a reaction vessel and heating the processing atmosphere. SOLUTION: An activation apparatus is provided within an ammonium gas supply path in the case where a silicon nitride film is formed on the surface of substrate through reaction, for example, of dichlorsilane gas and ammonium gas by supplying these gases to the reaction vessel. This activation apparatus has the structure that an electrode layer including, for example, the catalyst fine particles of iron and nickel is formed on the surface of a ceramic base material and a carbon nano-tube in the external diameter of 1μm or less is grown on this electrode layer. Since the carbon nano-tube has very higher electrical conductivity, it radiates high density thermal electrons when the power is fed and generates active seeds through activation of ammonium. This active seed reacts with dichlorsilane gas within the reactive vessel. COPYRIGHT: (C)2005,JPO&NCIPI
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