| 摘要 |
PROBLEM TO BE SOLVED: To enhance adhesiveness of a barrier metal film to an insulating layer without providing any cooling mechanism on a reverse sputtering apparatus. SOLUTION: When reverse sputtering is completed in a reverse sputtering chamber C2, a wafer W with the temperature thereof raised by the reverse sputtering is carried into a cooling chamber C3, and the wafer W is cooled in the cooling chamber C3, and carried into a sputtering chamber C4 to deposit a Ti film on the wafer W. COPYRIGHT: (C)2005,JPO&NCIPI
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