| 摘要 |
PURPOSE: A method for fabricating a transistor of a semiconductor device is provided to decrease the electrical thickness of a gate oxide layer and reduce a leakage current through a gate insulation layer by forming the gate oxide layer of a stack structure of an oxynitride layer, an oxide layer and an oxynitride layer. CONSTITUTION: The first rapid thermal oxynitride layer(205) is formed on a semiconductor substrate(201). The second rapid thermal oxynitride layer(208) is formed between the first rapid thermal oxynitride layer and the semiconductor substrate. A gate electrode material layer is formed on the second rapid thermal oxynitride layer. By an etch process, the gate electrode material layer, the second rapid thermal oxynitride layer and the first rapid thermal oxynitride layer are patterned to form a gate oxide layer composed of the first and second rapid thermal oxynitride layers and a gate electrode(210a,210b). A source/drain(216a,216b,216c,216d) is formed.
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