| 摘要 |
PURPOSE: Provided is a chemical/mechanical polishing slurry composition which minimizes the occurrence of microscratches, and has high polishing selectivity of oxide film and nitride film and excellent dispersion stability. CONSTITUTION: The chemical/mechanical polishing slurry composition comprises 0.1-20 wt% of a cerium oxide abrasive, 0.01-20 wt% of carboxylic acid or salts thereof, 0.01-10 wt% of an alcoholic compound, and water, which are based on the overall slurry composition. Preferably, the slurry composition has the pH of 7 or above. The slurry composition may further comprise a pH control agent selected from the group consisting of phosphoric acid, hydrochloric acid, sulfuric acid, nitric acid, ammonia, potassium hydroxide and their mixture and an abrasive grain dispersant selected from the group consisting of polyacrylic acid, ammonium polyacrylic acid and their mixture.
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