Photoresist composition and method of forming a photoresist pattern with a controlled remnant ratio

摘要

A photoresist composition may include formulas 1 and 2:where R is an acetal group or a ter-butyloxy carbonyl (t-BOC) group, n and m are integers, n/(m+n) is 0.01-0.8, and m/(m+n) is 1-[n/(m+n)],where r is an integer between 8-40.A method for forming photoresist patterns may include forming a photoresist layer on a semiconductor substrate and exposing and developing the photoresist layer using a mask pattern that includes first areas having a light transmissivity of about 100% and second areas having a light transmissivity of between about 10% and about 30%.