发明名称 Semiconductor integrated circuit designing method and semiconductor device
摘要 A transistor cell is designed by combining a transistor with passive elements such as a resistor, a capacitor, and an inductor. The parameters of the passive elements are determined so that the transistor cell has a maximum available gain characteristic that is flat in a desired frequency range. Matching circuits for input/output impedance matching for the transistor cell are designed so that loss occurring in the matching circuits has a flat frequency characteristic. A semiconductor integrated circuit is designed by combining the transistor cell and the matching circuits thus designed.
申请公布号 US6842880(B2) 申请公布日期 2005.01.11
申请号 US20020098441 申请日期 2002.03.18
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 SASAKI YOSHINOBU
分类号 H01L21/822;G06F17/50;H01L27/04;H01L27/06;H03F1/42;H03F1/56;H03F3/60;(IPC1-7):G06F17/50 主分类号 H01L21/822
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