发明名称 |
Semiconductor integrated circuit designing method and semiconductor device |
摘要 |
A transistor cell is designed by combining a transistor with passive elements such as a resistor, a capacitor, and an inductor. The parameters of the passive elements are determined so that the transistor cell has a maximum available gain characteristic that is flat in a desired frequency range. Matching circuits for input/output impedance matching for the transistor cell are designed so that loss occurring in the matching circuits has a flat frequency characteristic. A semiconductor integrated circuit is designed by combining the transistor cell and the matching circuits thus designed.
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申请公布号 |
US6842880(B2) |
申请公布日期 |
2005.01.11 |
申请号 |
US20020098441 |
申请日期 |
2002.03.18 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SASAKI YOSHINOBU |
分类号 |
H01L21/822;G06F17/50;H01L27/04;H01L27/06;H03F1/42;H03F1/56;H03F3/60;(IPC1-7):G06F17/50 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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