发明名称 Flash memory device and method of erasing the same
摘要 The present invention relates to a flash memory device and a method of erasing the same. Pre-program and post-program operations are performed using an automatic verify program method, and an erase operation is performed using an iterative program and verify method, by the use of sense amplifiers that can perform the iterative program and verify method and the automatic verify program method.
申请公布号 US6842378(B2) 申请公布日期 2005.01.11
申请号 US20020310142 申请日期 2002.12.05
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHANG SEUNG HO
分类号 G11C16/12;G11C16/28;G11C16/34;(IPC1-7):G11C16/06 主分类号 G11C16/12
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