发明名称 TEMPERATURE CALIBRATION METHOD FOR BAKING PROCESSING APPARATUS CAPABLE OF SUPPRESSING VARIATION OF EXPOSURE ON PHOTORESIST PATTERN RESIN LAYER DUE TO TEMPERATURE DIFFERENCE BETWEEN BAKING PROCESSING APPARATUSES, ADJUSTMENT METHOD FOR DEVELOPMENT PROCESSING APPARATUS, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE: A temperature calibration method for a baking processing apparatus, an adjustment method for a development processing apparatus, and a manufacturing method of a semiconductor device are provided to increase the manufacturing yield by suppressing variation of exposure on photoresist pattern resin layer due to temperature difference between baking processing apparatuses. CONSTITUTION: A photosensitive resin film is formed on a substrate. An exposure mask having a mask pattern(200) thereon is provided for monitoring an effective dose on a substrate. The substrate having the monitor is baked at plural predetermined temperatures according to each of plural baking processing apparatuses. A cooling process is performed on the baked substrate. A photoresist pattern resin layer is developed on the cooled substrate. A status of an exposure monitor pattern is monitored. The temperature is calibrated to increase efficiency of exposure for each of the baking processing apparatuses.</p>
申请公布号 KR20050002609(A) 申请公布日期 2005.01.07
申请号 KR20040049375 申请日期 2004.06.29
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ASANO, MASAFUMI;FUJISAWA, TADAHITO;HAYASAKI, KEI;ITO, SHINICHI;MUTOH, DAIZO;SHIBATA, TSUYOSHI
分类号 G03F7/26;G03F7/20;G03F7/40;H01L21/027;H01L23/544;(IPC1-7):H01L21/027;G03F1/087 主分类号 G03F7/26
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