METHOD OF FORMING LOW RESISTIVITY METAL LINE OF SEMICONDUCTOR DEVICE USING ENHANCED METAL LINE FORMING PROCESS

摘要

PURPOSE: A method of manufacturing a metal line of a semiconductor device is provided to reduce the resistivity of a metal material by forming a metal line on a seed layer made of an amorphous metallic thin film. CONSTITUTION: An interlayer dielectric(14) with a contact hole for exposing a lower layer(12) to the outside is formed on a semiconductor substrate(10). A seed layer(20) made of an amorphous metallic thin film is formed along the upper surface of the resultant structure. A metal film(22) for filling completely the contact hole is formed thereon.