Semiconductor memory device and electronic device

摘要

In the semiconductor memory device of the invention, even in the case of generation of a write access request or a refresh request in advance, an access control module preferentially executes a read access operation in response to a read access request generated by a change of an external access timing signal to an inactive level while a write enable signal supplied from an external device is at an inactive level. This arrangement desirably eliminates the long rate restriction of the semiconductor memory device.