SENSE AMPLIFIER DRIVER IN SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE USING THE SAME, ESPECIALLY INCREASING MEMORY MARGIN

摘要

PURPOSE: A sense amplifier driver is provided to reduce an effect of the off-current in semiconductor device during a high temperature and a fast process by controlling an activation point in time of a sense amplifier enable signal according to a magnitude of the off-current. CONSTITUTION: A sense amplifier driver(550) for generating an enable signal for enabling a sense amplifier comprises the first inverter(553) for receiving an input signal, and for generating an output signal which swings between a ground voltage(Vss) and a control voltage(DCTR) determined by a magnitude of the off-current in at least one of transistor in deactivated memory block; the second inverter(555) for receiving the output signal of the first inverter, and for buffering the output signal by delaying that in inverse proportion to the control voltage level. Wherein an activation point in time of an enable signal is controlled according to the control voltage level.