发明名称 |
Dielectric etch chamber with expanded process window |
摘要 |
A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
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申请公布号 |
US2005003675(A1) |
申请公布日期 |
2005.01.06 |
申请号 |
US20040863590 |
申请日期 |
2004.06.07 |
申请人 |
CARDUCCI JAMES D.;NOORBAKHSH HAMID;LEE EVANS Y.;PU BRYAN Y.;SHAN HONGQING;BJORKMAN CLAES;SALIMIAN SIAMAK;LUSCHER PAUL E.;WELCH MICHAEL D. |
发明人 |
CARDUCCI JAMES D.;NOORBAKHSH HAMID;LEE EVANS Y.;PU BRYAN Y.;SHAN HONGQING;BJORKMAN CLAES;SALIMIAN SIAMAK;LUSCHER PAUL E.;WELCH MICHAEL D. |
分类号 |
H01J37/32;H01L21/00;H01L21/311;H01L21/60;H01L21/683;H01L21/687;H01L21/768;(IPC1-7):H01L21/00;C23F1/00 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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