| 摘要 |
PROBLEM TO BE SOLVED: To suppress surface roughness of an SiGe film comprised of a gate electrode, and to improve controllability of a Ge composition at an interface between the gate electrode and a gate insulating film. SOLUTION: A semiconductor device comprises a silicon substrate 2 and a gate electrode including the SiGe film 10, which is formed on the silicon substrate 2 through the gate insulating film. A lower dielectric film 6 consisting of a silicon oxide film, a silicon nitride film, or a silicon oxynitride film, is formed as a lowermost layer film of the gate insulating film on the silicon substrate 2. A transition metal oxide film 8 consisting of an HfO<SB>2</SB>film is formed as an uppermost layer film of the gate insulating film. The SiGe film 10 is formed on the transition metal oxide film 8. COPYRIGHT: (C)2005,JPO&NCIPI
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