Plasma treatment of surfaces and materials with moving microwave plasma in wave-conducting hollow conductor structure involves moving plasma away from microwave input coupling point

摘要

The method involves moving a microwave-stimulated plasma (5) to a predefined point in a microwave-conducting hollow conductor structure (3). The plasma is caused to move away from the microwave input coupling point (2a) and the surfaces and materials to be treated are arranged in the region of action of the plasma within the microwave-conducting hollow conductor structure. An independent claim is also included for the following: (a) an arrangement for plasma treatment of surfaces and materials with a moving microwave plasma in a wave-conducting hollow conductor structure.