发明名称 |
Compositions for anti-reflective light absorbing layer and method for forming patterns in semiconductor device using the same |
摘要 |
A composition for an anti-reflective layer capable of simultaneously being developed together with a photoresist layer after exposure of the photoresist layer in a photolithography process and a method for forming patterns in a semiconductor device using the composition, wherein the anti-reflective light absorbing layer composition includes a polymer having a (meth)acrylate repeating unit, a light-absorbing group of diazoquinones chemically bound to the (meth)acrylate repeating unit, a photoacid generator, a cross-linker which thermally cross-links the polymer and is decomposed from the polymer by an acid, and a catalyst for the cross-linking reaction of the polymer. The method for forming patterns in a semiconductor device involves forming an anti-reflective layer on a semiconductor substrate using the composition and simultaneously exposing the anti-reflective layer and a photoresist layer, thereby chemically transforming the anti-reflective layer so it is able to be developed. The anti-reflective layer and the photoresist layer are simultaneously developed.
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申请公布号 |
US6838223(B2) |
申请公布日期 |
2005.01.04 |
申请号 |
US20030364406 |
申请日期 |
2003.02.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON SANG-WOONG;CHUNG HOE-SIK;RYU JIN-A;KIM YOUNG-HO |
分类号 |
G03F7/11;G03F7/004;G03F7/023;G03F7/038;G03F7/09;G03F7/095;H01L21/027;(IPC1-7):G03F7/023;G03F7/30 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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