发明名称 Method for producing scatter lines in mask structures for fabricating integrated electrical circuits
摘要 In the method according to the invention, scatter lines (2, 3, 4, 5, 6, 7, 8) with a predetermined width are produced, which run at a predetermined distance from selected edges of mask structure elements (1). These scatter lines (2, 3, 4, 5, 6, 7, 8) produced are inspected with regard to compliance with a predetermined distance from adjoining edges of mask structure elements (1) and with regard to compliance with a predetermined distance from one another. Scatter lines (2, 3, 4, 5, 6, 7, 8) which fall below the predetermined distance are shortened and/or eliminated.
申请公布号 US6838212(B2) 申请公布日期 2005.01.04
申请号 US20020165911 申请日期 2002.06.10
申请人 INFINEON TECHNOLOGIES AG 发明人 MEIER WOLFGANG
分类号 G03F1/00;G03F1/14;(IPC1-7):G03F9/00;G06F17/50 主分类号 G03F1/00
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