| 摘要 |
A semiconductor storage device includes a first signal line connected to a first reference cell, a second signal line connected to a second reference cell and a potential supply circuit having first and second states. In a first state, the potential supply circuit responds to a second control signal at a first potential level, and supplies first and second reference cells respectively with potentials corresponding to first data via a first signal line and second data via a second signal line. In a second state, the potential supply circuit responds to a second control signal at a second potential level, and supplies the first and second reference cells respectively with potentials corresponding to first data via the first signal line and first data via the second signal line. A reference potential generation circuit thus decreases imprint and fatigue of a ferroelectric film of a reference cell.
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