SEMICONDUCTOR DEVICE WITH BIPOLAR JUNCTION TRANSISTOR USING TRIPLE WELL PROCESSING AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce leakage current and to increase current gain by forming a BJT(Bipolar Junction Transistor) having a buried base using triple well processing. CONSTITUTION: A deep n-well(32) is formed in a substrate to define a BJT region. A first n-well(34) is formed in the deep n-well to define an emitter region. An N+ emitter(38) is formed on the first n-well. An isolation layer(36) is formed on the substrate to isolate the first n-well. A p-well(40) is formed in the deep n-well to define a base region. A P+ base(42) is formed on the p-well. A second n-well(46) is spaced apart from the p-well to define a collector region. An N+ collector(48) is formed on the second n-well. Buried bases(44) are formed at the lower portion of the emitter and the base.