发明名称 DATA INPUT DEVICE OF DDR SDRAM USING DATA-IN STROBE SIGNAL
摘要 PURPOSE: A data input device of DDR SDRAM using a data-in strobe signal is provided to reduce the write time by directly applying a write-in strobe signal to a data buffer in a write mode, and to reduce the layout area. CONSTITUTION: A data input device of DDR SDRAM using data-in strobe signal comprises a clock pulse generator(400) for receiving an internal clock in a write mode and outputting a data-in strobe signal as the first control signal; the first data buffer(440,441) controlled by the data-in strobe signal having the first global input/output line of the DDR SDRAM as the output line; the second data buffer(440,441) controlled by the data-in strobe signal having the second global input/output line of the DDR SDRAM as the output line. In case the second control signal(soseb_wt) is low level, the first data(dinr) is applied to the first data buffer directly and transmitted to the first global input/output line(gio_ev), and the second data(dinf) is applied to the second data buffer directly and transmitted to the second global input/output line(gio_od). In case the second control signal(soseb_wt) is high level, the first data is applied to the second data buffer directly and transmitted to the second global input/output line, and the second data is applied to the first data buffer directly and transmitted to the first global input/output line.
申请公布号 KR20040110280(A) 申请公布日期 2004.12.31
申请号 KR20030039506 申请日期 2003.06.18
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHO, HO YEOP
分类号 G11C11/40;G11C5/00;G11C7/10;G11C7/22;G11C11/4096;(IPC1-7):G11C11/40 主分类号 G11C11/40
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