| 发明名称 |
Method of fabricating a vertical quadruple conduction channel insulated gate transistor, and integrated circuit including this kind of transistor |
| 摘要 |
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| 申请公布号 |
US2004266112(A1) |
申请公布日期 |
2004.12.30 |
| 申请号 |
US20040852057 |
申请日期 |
2004.05.24 |
| 申请人 |
ST MICROELECTRONICS SA |
发明人 |
SKOTNICKI THOMAS;JOSSE EMMANUEL |
| 分类号 |
H01L21/336;H01L29/165;H01L29/78;(IPC1-7):H01L21/332;H01L21/476;H01L21/823 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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