| 摘要 |
<p>A light emitting device in which emission quantity is increased without altering the size of the light emitting device. The light emitting device characterized by forming a semiconductor layer (30) on the protruding/recessed surface (1a) of a protruding/recessed substrate (1). In the light emitting device, the protruding/recessed substrate and the semiconductor layer are composed of a material having a composition represented by AlxGayIn1-x-yN (0<=x, 0<=y, x+y<=1), each plane forming the protruding/recessed surface of the protruding/recessed substrate has a Miller index of 1 or above being selected from (11-2L) and (1-10L) where L is an integer of 1-4, or the angle phi between each plane forming the protruding/recessed surface of the protruding/recessed substrate and the bottom plane is set in the range of 35-80˚.</p> |
