SINGLE-WAFER TYPE HEAT TREATMENT APPARATUS FOR SEMICONDUCTOR PROCESSING SYSTEM

摘要

A single-wafer type heat treatment apparatus (2) for semiconductor processing system comprises a process chamber (4) housing a wafer to be treated (W). A supporting member (6) is arranged in the process chamber (4) for supporting the wafer to be treated (W) generally horizontally in such a manner that the lower surface of the wafer is exposed. A heating gas supply unit (20) is arranged for generating a heating gas and supplying the gas to the lower surface of the wafer to be treated (W). A dispersing member (16) is arranged in a channel through which the heating gas from the heating gas supply means (20) is supplied, for improving uniformity of gas dispersion across the lower surface of the wafer to be treated (W).