发明名称 |
Semiconductor light receiving element |
摘要 |
A semiconductor light receiving element has a semiconductor portion. The semiconductor portion includes a substrate, a light detecting portion, and a filter portion. The substrate, the light detecting portion, and the filter portion are provided sequentially in a direction of a predetermined axis. The light detecting portion has a light absorbing layer including a III-V semiconductor layer, a window layer including a III-V semiconductor layer, and an anode semiconductor region. The light absorbing layer is an n or i conductivity type semiconductor layer. The light absorbing layer is provided between a III-V semiconductor layer and the window layer. The light detecting portion is provided on one face of the semiconductor substrate with the III-V semiconductor layer interposed therebetween. The filter portion includes InGaAsP semiconductor layers and III-V semiconductor layers.
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申请公布号 |
US6835990(B2) |
申请公布日期 |
2004.12.28 |
申请号 |
US20030359582 |
申请日期 |
2003.02.07 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
IGUCHI YASUHIRO;YAMAGUCHI AKIRA;SHIOZAKI MANABU;IWASAKI TAKASHI;OHKI KENJI |
分类号 |
H01L27/146;G02B6/34;G02B6/42;H01L31/0216;H01L31/0232;H01L31/10;H04B10/02;H04B10/2507;H04B10/28;H04B10/40;H04B10/50;H04B10/60;(IPC1-7):H01L31/023 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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