发明名称 Method of manufacturing a semiconductor device
摘要 An improvement of the yield of semiconductor devices is achieved in the manufacture of a semiconductor device. The method includes forming a resin enclosure for block-molding a plurality of a semiconductor chips by placing a plurality of semiconductor chips inside a cavity of a molding die along with a substrate, and then injecting a resin from a first side to a second side of a main surface of the substrate. The plurality of semiconductor chips are mounted on the main surface of the substrate from the first side to the second side of the main surface with a predetermined spacing, the second side facing the first side. The method is characterized by the application of cleaning treatment to the main surface of the substrate before forming the resin enclosure.
申请公布号 US6835596(B2) 申请公布日期 2004.12.28
申请号 US20010965221 申请日期 2001.09.28
申请人 RENESAS TECHNOLOGY CORP.;HITACHI HOKKAI SEMICONDUCTOR, LTD. 发明人 GOTOU MASAKATSU;KASAI NORIHIKO
分类号 H01L25/18;B29C45/14;H01L21/56;H01L25/065;H01L25/07;(IPC1-7):H01L21/44;H01L21/48;B29C33/72;B29C70/88 主分类号 H01L25/18
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