发明名称 |
METHOD OF FORMING A VERTICAL POWER SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR |
摘要 |
A method of forming medium breakdown voltage vertical transistors (11) and lateral transistors (12, 13) on the same substrate (14) provides for optimizing the epitaxial layer (16) for the lateral transistors (12, 13). The vertical transistor (11) is formed in a well (18) that has a lower resistivity than the epitaxial layer (16) to provide the required low on-resistance for the vertical power transistor (11).
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申请公布号 |
US2004256680(A1) |
申请公布日期 |
2004.12.23 |
申请号 |
US20030464971 |
申请日期 |
2003.06.20 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. |
发明人 |
ROBB STEPHEN P. |
分类号 |
H01L21/331;H01L21/336;H01L21/8234;H01L21/8238;H01L29/08;H01L29/76;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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