发明名称 |
Nonvolatile semiconductor memory with X8/X16 operation mode using address control |
摘要 |
The present invention relates to a nonvolatile semiconductor memory, that is, a flash memory and especially to a NAND type flash memory device capable of selectively controlling data input/output units by an address control. In the NAND type flash memory device, a memory cell array is divided into a plurality of blocks, and a data input/output path is selectively controlled by a predetermined data rate option and introduced addresses to perform data input/output operations at a x8 or x16 speed in one chip.
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申请公布号 |
US2004257846(A1) |
申请公布日期 |
2004.12.23 |
申请号 |
US20040835148 |
申请日期 |
2004.04.28 |
申请人 |
LEE HYOUNG-WOO;LEE JUNE;KWON OH-SUK |
发明人 |
LEE HYOUNG-WOO;LEE JUNE;KWON OH-SUK |
分类号 |
G11C16/06;G11C7/10;G11C8/10;G11C16/04;G11C16/08;G11C16/10;G11C16/26;G11C19/08;(IPC1-7):G11C19/08 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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