发明名称 PECVD reactor in-situ monitoring system
摘要 An apparatus for depositing films on a substrate, the apparatus including: a plasma deposition chamber having a first electrode and a second electrode that defines a target plane in which the substrate is held during deposition, and wherein during deposition a plasma is sustained between the first and second electrodes, said deposition chamber also including an input window and an output window; and a monitoring system which includes a light source and an optical detector, both located outside of the deposition chamber, said optical monitoring system also including an optical system that directs a beam from the light source through the input window and into the deposition chamber as a measurement beam, wherein the measurement beam arrives at the target plane along a path that is approximately normal to the target plane and wherein during operation said measurement beam interacts with the substrate to generate a return measurement beam that passes from the substrate out of the chamber through the output window, wherein said optical system directs the measurement return beam onto the optical detector.
申请公布号 US2004255853(A1) 申请公布日期 2004.12.23
申请号 US20040846991 申请日期 2004.05.14
申请人 AEGIS SEMICONDUCTOR 发明人 MA EUGENE YI-SHAN;WU MING
分类号 G01N21/00;(IPC1-7):G01N21/00 主分类号 G01N21/00
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