SONOS MEMORY DEVICE USED AS MULTI-FUNCTIONAL DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An SONOS(Silicon-Oxide-Nitride-Oxide-Silicon) memory device and a manufacturing method thereof are provided to keep a memory node layer in an amorphous state even under a high temperature MOS(Metal Oxide Semiconductor) process by using a high dielectric MON or MSiON layer as the memory node layer. CONSTITUTION: An SONOS memory device includes a semiconductor substrate(40) and a multi-functional device with a switching function and a data storing function. The multi-functional device includes a first and second impurity region(42,44) in the substrate, a channel region(46) between the first and second impurity regions, and a data storing laminate(60) formed on the substrate to align the first and second impurity regions. The data storing laminate is formed by depositing sequentially a tunneling oxide layer(48a), a memory node layer(50a), a blocking layer(52a) and an electrode layer(54a). The memory node layer is made of an MON layer or an MSiON layer.