发明名称 |
Method for reducing drain induced barrier lowering in a memory device |
摘要 |
The present invention is a method for fabricating a memory device. In one embodiment, a first impurity concentration is deposited in a channel region of a memory device. A second impurity concentration, which overlies the first impurity concentration, is then created in the channel region. Finally, a memory array is fabricated upon the channel region. The memory array overlies the first impurity concentration and the second impurity concentration.
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申请公布号 |
US6833297(B1) |
申请公布日期 |
2004.12.21 |
申请号 |
US20020265001 |
申请日期 |
2002.10.04 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
FASTOW RICHARD M.;HE YUE-SONG;WONG NGA-CHING |
分类号 |
H01L21/336;H01L21/8234;H01L29/788;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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