| 摘要 |
PURPOSE: A method of measuring impurity concentration of a semiconductor insulating layer is provided to measure exactly the concentration of boron regardless of the roughness of a backside of a wafer by preventing the reflection of incident light and minimizing the scattering of transmitted light using P-polarized light as the incident light and the Brewster's angle as an incident angle. CONSTITUTION: A silicon wafer with an insulating layer(2f) formed on its front surface is provided. A P-polarized IR(Infrared Ray) beam with the Brewster's angle is irradiated on a rear surface of the silicon wafer, so that the reflection of the IR beam is restrained. The IR beam is transmitted through the insulating layer and captured. At this time, impurity concentration of the insulating layer is measured according to the intensity of the transmitted IR beam. The insulating layer is made of a BPSG(BoroPhosphorSilicate Glass) film.
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