| 摘要 |
PURPOSE:To improve oxygen resistant RIE and sensitivity and to enable alkaline development by constituting the title resist of an alkali-soluble resin contg. silicon, naphthoquinediazide contg. silicon and photosensitive agent selected from azide contg. silicon or specific compd. CONSTITUTION:This resist is constituted of the alkali-soluble resin contg. silicon, the naphthoquinediazide contg. silicon and the photosensitive agent selected from the azide contg. silicon or the compd. expressed by formula I. In formula I, R1-R4 denote hydrogen, substd. or unsubstd. alkyl group of 1-10C, substd. or unsubstd. aryl group or substd. or unsubstd. silyl group. The extremely high oxygen resistant RIE characteristic is thereby obtd. and the good mask effect to the dry etching of the flattened layer of the lower layer by oxygen plasma is exhibited. In addition, the alkali developability is improved and the higher sensitivity is obtd. |
