发明名称 |
CMOS thin film transistor and display device using the same |
摘要 |
A CMOS thin film transistor and a display device using the same the CMOS thin film transistor has improved electrical characteristics, such as, current mobility and threshold voltage. The CMOS thin film transistor is fabricated such that the direction of active channels of the P-type thin film transistor and the direction of active channels of the N-type thin film transistor are different from each other, Primary grain boundaries included in the P-type thin film transistor are angled such that they are at an angle of about 60 to about 120° with respect to an active channel direction. Primary grain boundaries included in the N-type thin film transistor are angled such that they are at an angle of about -30° to about 30°. The active channels are formed in polycrystalline silicon.
|
申请公布号 |
US2004251463(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
US20040756393 |
申请日期 |
2004.01.14 |
申请人 |
PARK JI-YONG;KOO JAE-BON;PARK HYE-HYANG |
发明人 |
PARK JI-YONG;KOO JAE-BON;PARK HYE-HYANG |
分类号 |
H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/786;(IPC1-7):H01L29/76;H01L31/112 |
主分类号 |
H01L21/77 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|