SUBSTRATE FOR STRESSED SYSTEMS AND METHOD FOR CRYSTAL GROWTH ON SUCH A SUBSTRATE
摘要
<p>The invention relates to a support for crystalline growth, comprising a nucleation layer (2), a polycrystalline or porous buffer layer (4) and a support layer (6).</p>
申请公布号
WO2004109781(A1)
申请公布日期
2004.12.16
申请号
WO2004FR01314
申请日期
2004.05.27
申请人
S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES;LETERTRE, FABRICE;GHYSELEN, BRUNO;RAYSSAC, OLIVIER
