| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device with capacitance reduced between its floating gate electrodes, and to provide a method for manufacturing the same. SOLUTION: A polycrystalline silicon film 200 is buried between memory cells in the word-line direction, the polycrystalline silicon film 200 is applied with a potential, and the nonvolatile semiconductor memory device thus constructed is used. In this memory device, capacitance between floating gate electrodes FG is lowered for a reduction in capacitance between memory cells, and this reduces mutual interference between the memory cells. COPYRIGHT: (C)2005,JPO&NCIPI
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