A laser annealing process capable of suppressing a variation in sheet resistance. A surface layer formed shallower than 100 nm in a substrate of semiconductor material is added with impurities. The substrate is irradiated with a laser beam or its harmonic beam emitted from a laser diode pumped totally solid laser oscillator to activate the impurities.
申请公布号
WO2004109783(A1)
申请公布日期
2004.12.16
申请号
WO2004JP07606
申请日期
2004.06.02
申请人
SUMITOMO HEAVY INDUSTRIES, LTD.;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;KUDO, TOSHIO;MIZUNO, BUNJI;SASAKI, YUICHIRO;JIN, CHENG-GUO