METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which impurities and crystal defects in a ferroelectric film are reduced while sustaining good ferroelectric characteristics thereof by controlling the orientation of the ferroelectric film. The method for fabricating a semiconductor device comprises a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer, characterized in that the film deposition temperature of the first film deposition process is 600˚C or above.